High-Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si...

IEEE Transactions on Electron Devices 2015 / 3 Vol. 62; Iss. 3

High-Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si MISFETs With 626 MW/ $\mathrm{cm}^{2}$ Figure of Merit

Zhou, Qi, Chen, Bowen, Jin, Yang, Huang, Sen, Wei, Ke, Liu, Xinyu, Bao, Xu, Mou, Jinyu, Zhang, Bo
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Volume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2014.2385062
Date:
March, 2015
File:
PDF, 2.04 MB
english, 2015
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