Drain-Current Flicker Noise Modeling in nMOSFETs From a 14-nm FDSOI Technology
Ioannidis, Eleftherios G., Theodorou, Christoforos G., Karatsori, Theano A., Haendler, Sebastien, Dimitriadis, Charalabos A., Ghibaudo, GerardVolume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2015.2411678
Date:
May, 2015
File:
PDF, 1.06 MB
english, 2015