Cryogenic Lifetime Studies of 130 nm and...

IEEE Transactions on Nuclear Science 2015 / 6 Vol. 62; Iss. 3

Cryogenic Lifetime Studies of 130 nm and 65 nm nMOS Transistors for High-Energy Physics Experiments

Hoff, J. R., Deptuch, G. W., Wu, Guoying, Gui, Ping
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Volume:
62
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/tns.2015.2433793
Date:
June, 2015
File:
PDF, 1.03 MB
english, 2015
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