Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2006 Vol. 24; Iss. 1
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Effect of buried Si∕SiO[sub 2] interface on dopant and defect evolution in preamorphizing implant ultrashallow junction
Hamilton, J. J., Colombeau, B., Sharp, J. A., Cowern, N. E. B., Kirkby, K. J., Collart, E. J. H., Bersani, M., Giubertoni, D.Volume:
24
Year:
2006
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.2140004
File:
PDF, 465 KB
english, 2006