Effect of buried Si∕SiO[sub 2] interface on dopant and...

Effect of buried Si∕SiO[sub 2] interface on dopant and defect evolution in preamorphizing implant ultrashallow junction

Hamilton, J. J., Colombeau, B., Sharp, J. A., Cowern, N. E. B., Kirkby, K. J., Collart, E. J. H., Bersani, M., Giubertoni, D.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
24
Year:
2006
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.2140004
File:
PDF, 465 KB
english, 2006
Conversion to is in progress
Conversion to is failed