Pt/SrBi 2 Ta 2 O 9 /Hf-Al-O/Si Field-Effect-Transistor with Long Retention Using Unsaturated Ferroelectric Polarization Switching
Sakai, Shigeki, Ilangovan, Rajangam, Takahashi, MitsueVolume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.43.7876
Date:
November, 2004
File:
PDF, 27 KB
english, 2004