Epitaxial AlN Thin Film Surface Acoustic Wave Devices...

Japanese Journal of Applied Physics 2008 / 1 Vol. 47; Iss. 1

Epitaxial AlN Thin Film Surface Acoustic Wave Devices Prepared on GaN/Sapphire Using Low-Temperature Helicon Sputtering System

Kao, H. L., Chen, W. C., Chien, Wei-Cheng, Lin, Hui-Feng, Chen, Tzu Chieh, Lin, Chung Yi, Lin, Y. T., Chyi, J.-I., Hsu, C.-H.
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Volume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.47.124
Date:
January, 2008
File:
PDF, 382 KB
english, 2008
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