High Electrostatic Discharge Protection Using Multiple...

Japanese Journal of Applied Physics 2008 / 3 Vol. 47; Iss. 3

High Electrostatic Discharge Protection Using Multiple Si:N/GaN and Si:N/Si:GaN Layers in GaN-Based Light Emitting Diodes

Kuan, Hon
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Volume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.47.1544
Date:
March, 2008
File:
PDF, 290 KB
english, 2008
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