AlGaN/GaN High Electron Mobility Transistors Grown on 150...

Japanese Journal of Applied Physics 2008 / 3 Vol. 47; Iss. 3

AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity

Cheng, Kai, Leys, Maarten, Degroote, Stefan, Derluyn, Joff, Sijmus, Brian, Favia, Paola, Richard, Olivier, Bender, Hugo, Germain, Marianne, Borghs, Gustaaf
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Volume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.47.1553
Date:
March, 2008
File:
PDF, 161 KB
english, 2008
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