Dependence of Carrier Lifetime of InAlAs/InGaAs High-Electron-Mobility Transistors on Gate-to-Source Voltage
Taguchi, Hirohisa, Sato, Takuro, Oura, Masashi, Iida, Tsutomu, Takanashi, YoshifumiVolume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.47.2858
Date:
April, 2008
File:
PDF, 170 KB
english, 2008