Realization of 340-nm-Band High-Output-Power (>7 mW)...

Japanese Journal of Applied Physics 2008 / 4 Vol. 47; Iss. 4

Realization of 340-nm-Band High-Output-Power (>7 mW) InAlGaN Quantum Well Ultraviolet Light-Emitting Diode with p-Type InAlGaN

Fujikawa, Sachie, Takano, Takayoshi, Kondo, Yukihiro, Hirayama, Hideki
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Volume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.47.2941
Date:
April, 2008
File:
PDF, 201 KB
english, 2008
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