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Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation
Maroldt, Stephan, Haupt, Christian, Pletschen, Wilfried, Müller, Stefan, Quay, Rüdiger, Ambacher, Oliver, Schippel, Christian, Schwierz, FrankVolume:
48
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.48.04c083
Date:
April, 2009
File:
PDF, 164 KB
english, 2009