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Device Characteristics of Metalorganic Chemical Vapor Deposition-Grown InAlN/GaN High-Electron-Mobility Transistors on AlN/Sapphire Template
Selvaraj, Josephine, Selvaraj, Susai Lawrence, Miyoshi, Makoto, Kuraoka, Yoshitaka, Tanaka, Mitsuhiro, Egawa, TakashiVolume:
48
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.48.04c102
Date:
April, 2009
File:
PDF, 448 KB
english, 2009