High Off-state Breakdown Voltage 60-nm-Long-Gate AlGaN/GaN...

Japanese Journal of Applied Physics 2009 / 9 Vol. 48; Iss. 9

High Off-state Breakdown Voltage 60-nm-Long-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with AlGaN Back-Barrier

Onojima, Norio, Hirose, Nobumitsu, Mimura, Takashi, Matsui, Toshiaki
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Volume:
48
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.48.094502
Date:
September, 2009
File:
PDF, 141 KB
english, 2009
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