Vertical GaN-Based Light-Emitting Diodes Structure on...

Japanese Journal of Applied Physics 2010 / 7 Vol. 49; Iss. 7

Vertical GaN-Based Light-Emitting Diodes Structure on Si(111) Substrate with Through-Holes

Wei, Jingting, Zhang, Baijun, Wang, Gang, Fan, Bingfeng, Liu, Yang, Rao, Wentao, Huang, Zhicong, Yang, Weimin, Chen, Tufu, Egawa, Takashi
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Volume:
49
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.49.072104
Date:
July, 2010
File:
PDF, 2.80 MB
english, 2010
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