Deep Traps in InAlN Lattice-Matched to GaN Grown by Metal...

Japanese Journal of Applied Physics 2011 / 8 Vol. 50; Iss. 8

Deep Traps in InAlN Lattice-Matched to GaN Grown by Metal Organic Chemical Vapor Deposition Studied by Deep-Level Transient Spectroscopy

Chen, Zhitao, Fujita, Kazuhisa, Ichikawa, Junki, Sakai, Yusuke, Egawa, Takashi
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Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.50.081001
Date:
August, 2011
File:
PDF, 264 KB
english, 2011
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