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AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
Oshimura, Yoshinori, Sugiyama, Takayuki, Takeda, Kenichiro, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, HiroshiVolume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.50.084102
Date:
August, 2011
File:
PDF, 1.17 MB
english, 2011