AlGaN/GaN Heterostructure Field-Effect Transistors on...

Japanese Journal of Applied Physics 2011 / 8 Vol. 50; Iss. 8

AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage

Oshimura, Yoshinori, Sugiyama, Takayuki, Takeda, Kenichiro, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.50.084102
Date:
August, 2011
File:
PDF, 1.17 MB
english, 2011
Conversion to is in progress
Conversion to is failed