Vertical InGaN Multiple Quantum Wells Light-Emitting Diodes...

Japanese Journal of Applied Physics 2012 / 01 Vol. 51; Iss. 1

Vertical InGaN Multiple Quantum Wells Light-Emitting Diodes Structures Transferred from Si(111) Substrate onto Electroplating Copper Submount with Through-Holes

Luo, Ruihong, Rao, Wentao, Chen, Tufu, Xiang, Peng, Liu, Minggang, Yang, Weimin, Wang, Yunqian, Yang, Yibin, Wu, Zhisheng, Liu, Yang, Jiang, Hao, Zhang, Baijun
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Volume:
51
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.51.012101
Date:
January, 2012
File:
PDF, 596 KB
english, 2012
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