Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate
Hirama, Kazuyuki, Kasu, Makoto, Taniyasu, YoshitakaVolume:
51
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.51.01ag09
Date:
January, 2012
File:
PDF, 997 KB
english, 2012