Band-Structure Lineup at In$_{0.2}$Ga$_{0.8}$N/Si...

Japanese Journal of Applied Physics 2012 / 1 Vol. 51

Band-Structure Lineup at In$_{0.2}$Ga$_{0.8}$N/Si Heterostructures by X-ray Photoelectron Spectroscopy

Kumar, Mahesh, Roul, Basanta, Bhat, Thirumaleshwara N., Rajpalke, Mohana K., Kalghatgi, A. T., Krupanidhi, S. B.
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Volume:
51
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.51.020203
Date:
January, 2012
File:
PDF, 875 KB
english, 2012
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