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Influence of Tin Impurities on the Generation and Annealing of Thermal Oxygen Donors in Czochralski Silicon at 450°C
Neimash, V. B., Kraitchinskii, A., Kras'ko, M., Puzenko, O., Claeys, C., Simoen, E., Svensson, B., Kuznetsov, A.Volume:
147
Year:
2000
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.1393596
File:
PDF, 326 KB
english, 2000