Effect of Annealing Conditions on a Hafnium Oxide Reinforced SiO[sub 2] Gate Dielectric Deposited by Plasma-Enhanced Metallorganic CVD
Choi, Kyu-Jeong, Shin, Woong-Chul, Yoon, Soon-GilVolume:
149
Year:
2002
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.1450617
File:
PDF, 333 KB
english, 2002