Improvements in Reliability and Leakage Current Properties...

Electrochemical and Solid-State Letters 2004 Vol. 7; Iss. 11

Improvements in Reliability and Leakage Current Properties of HfO[sub 2] Gate Dielectric Films by In Situ O[sub 3] Oxidation of Si Substrate

Park, Hong Bae, Cho, Moonju, Park, Jaehoo, Lee, Suk Woo, Park, Tae Joo, Hwang, Cheol Seong
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Volume:
7
Year:
2004
Language:
english
Journal:
Electrochemical and Solid-State Letters
DOI:
10.1149/1.1804976
File:
PDF, 174 KB
english, 2004
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