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Reduction of Electron-Beam-Induced Damage in MOS Devices Using Three-Layer Resist with Heavy Metal Interlayer
Shimaya, MasakazuVolume:
131
Year:
1984
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.2115855
File:
PDF, 545 KB
english, 1984