Fabrication of High Aspect Ratio 35 μm Pitch Through-Wafer...

Electrochemical and Solid-State Letters 2006 Vol. 9; Iss. 10

Fabrication of High Aspect Ratio 35 μm Pitch Through-Wafer Copper Interconnects by Electroplating for 3-D Wafer Stacking

Dixit, Pradeep, Miao, Jianmin, Preisser, Robert
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Volume:
9
Year:
2006
Language:
english
Journal:
Electrochemical and Solid-State Letters
DOI:
10.1149/1.2236374
File:
PDF, 264 KB
english, 2006
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