[ECS 214th ECS Meeting - Honolulu, HI (October 12 - October 17, 2008)] ECS Transactions - Noise Properties of High-Mobility, 80 nm Gate Length MOSFETs on Supercritical Virtual Substrates
Malm, B G., Hallstedt, Julius, Hellström, Per-Erik, Ostling, MikaelVolume:
16
Year:
2008
Language:
english
DOI:
10.1149/1.2986809
File:
PDF, 1.55 MB
english, 2008