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[ECS 215th ECS Meeting - San Francisco, CA (May 24 - May 29, 2009)] ECS Transactions - The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-passivated Ge pMOSFETs
Caymax, Matty R., Leys, Frederik, Mitard, Jerome, Martens, Koen, Yang, Lijun, Pourtois, Geoffrey, Vandervorst, Wilfried, Meuris, Marc, Loo, RogerYear:
2009
Language:
english
DOI:
10.1149/1.3118944
File:
PDF, 893 KB
english, 2009