Activation of Implanted n-Type Dopants in Ge Over the...

Activation of Implanted n-Type Dopants in Ge Over the Active Concentration of 1×10[sup 20] cm[sup −3] Using Coimplantation of Sb and P

Kim, Jeehwan, Bedell, Stephen W., Maurer, Siegfried L., Loesing, Rainer, Sadana, Devendra K.
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Volume:
13
Year:
2010
Language:
english
Journal:
Electrochemical and Solid-State Letters
DOI:
10.1149/1.3257912
File:
PDF, 549 KB
english, 2010
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