In[sub 0.7]Ga[sub 0.3]As Channel n-MOSFET with Self-Aligned...

Electrochemical and Solid-State Letters 2011 Vol. 14; Iss. 2

In[sub 0.7]Ga[sub 0.3]As Channel n-MOSFET with Self-Aligned Ni–InGaAs Source and Drain

Zhang, Xingui, Guo, Huaxin, Gong, Xiao, Zhou, Qian, Lin, You-Ru, Lin, Hau-Yu, Ko, Chih-Hsin, Wann, Clement H., Yeo, Yee-Chia
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Volume:
14
Year:
2011
Language:
english
Journal:
Electrochemical and Solid-State Letters
DOI:
10.1149/1.3516213
File:
PDF, 291 KB
english, 2011
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