Vertical Blocking Voltage Improvement of GaN HEMT...

ECS Journal of Solid State Science and Technology 2013 / 07 Vol. 2; Iss. 8

Vertical Blocking Voltage Improvement of GaN HEMT Structures on n-SiC by Pre-Epitaxial Substrate Implantation

Kotara, P., Zhytnytska, R., Hilt, O., Cho, E., Brunner, F., Thies, A., Bahat-Treidel, E., Wurfl, J.
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Volume:
2
Language:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.014308jss
Date:
July, 2013
File:
PDF, 2.12 MB
english, 2013
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