Anomalous Gate Current Hump after Dynamic Negative Bias...

ECS Journal of Solid State Science and Technology 2013 / 07 Vol. 2; Iss. 9

Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1-xO2 and HfO2/Metal Gate Stacks

Ho, S.-H., Chang, T.-C., Wu, C.-W., Lo, W.-H., Chen, C.-E., Tsai, J.-Y., Chen, H.-M., Liu, G.-R., Tseng, T.-Y., Cheng, O., Huang, C.-T., Chen, D., Sze, S. M.
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Volume:
2
Language:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.027309jss
Date:
July, 2013
File:
PDF, 1.87 MB
english, 2013
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