Wide bandgap over 3 eV and high p-doping BeZnTe...

Wide bandgap over 3 eV and high p-doping BeZnTe grown on InP substrates by molecular beam epitaxy

Song-Bek Che, Ichirou Nomura, Wataru Shinozaki, Akihiko Kikuchi, Kazuhiko Shimomura, Katsumi Kishino
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Volume:
214-215
Year:
2000
Language:
english
Pages:
4
DOI:
10.1016/s0022-0248(00)00101-9
File:
PDF, 113 KB
english, 2000
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