Transmission electron microscopy investigation of the...

Transmission electron microscopy investigation of the crystallographic quality of silicon films grown epitaxially on porous silicon

S Jin, H Bender, L Stalmans, R Bilyalov, J Poortmans, R Loo, M Caymax
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Volume:
212
Year:
2000
Language:
english
Pages:
9
DOI:
10.1016/s0022-0248(00)00226-8
File:
PDF, 1.80 MB
english, 2000
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