Study of interface reactions between Si and GaN at high...

Study of interface reactions between Si and GaN at high temperatures using scanning photoelectron microscopy and X-ray absorption spectroscopy

R Graupner, Qi Ye, T Warwick, E Bourret-Courchesne
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Volume:
217
Year:
2000
Language:
english
Pages:
10
DOI:
10.1016/s0022-0248(00)00413-9
File:
PDF, 587 KB
english, 2000
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