Study of interface reactions between Si and GaN at high temperatures using scanning photoelectron microscopy and X-ray absorption spectroscopy
R Graupner, Qi Ye, T Warwick, E Bourret-CourchesneVolume:
217
Year:
2000
Language:
english
Pages:
10
DOI:
10.1016/s0022-0248(00)00413-9
File:
PDF, 587 KB
english, 2000