Optimisation of AlN and GaN growth by metalorganic...

Journal of Crystal Growth 2000 Vol. 217; Iss. 1-2

Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (1 1 1)

H Lahrèche, P Vennéguès, O Tottereau, M Laügt, P Lorenzini, M Leroux, B Beaumont, P Gibart
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Volume:
217
Year:
2000
Language:
english
Pages:
13
DOI:
10.1016/s0022-0248(00)00478-4
File:
PDF, 1.15 MB
english, 2000
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