Investigation of the growth mechanism of an InSe epitaxial layer on a MoS2 substrate
Toshiyuki Hayashi, Keiji Ueno, Koichiro Saiki, Atsushi KomaVolume:
219
Year:
2000
Language:
english
Pages:
8
DOI:
10.1016/s0022-0248(00)00627-8
File:
PDF, 445 KB
english, 2000