Carbon doping for the GaAs base layer of Heterojunction...

Journal of Crystal Growth 2000 Vol. 221; Iss. 1-4

Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor

F Brunner, T Bergunde, E Richter, P Kurpas, M Achouche, A Maaßdorf, J Würfl, M Weyers
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Volume:
221
Year:
2000
Language:
english
Pages:
6
DOI:
10.1016/s0022-0248(00)00648-5
File:
PDF, 212 KB
english, 2000
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