In situ studies of the effect of silicon on GaN growth...

Journal of Crystal Growth 2000 Vol. 221; Iss. 1-4

In situ studies of the effect of silicon on GaN growth modes

A Munkholm, G.B Stephenson, J.A Eastman, O Auciello, M.V.Ramana Murty, Carol Thompson, P Fini, J.S Speck, S.P DenBaars
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Volume:
221
Year:
2000
Language:
english
Pages:
8
DOI:
10.1016/s0022-0248(00)00656-4
File:
PDF, 275 KB
english, 2000
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