Fabrication and characterization of low defect density GaN...

Journal of Crystal Growth 2000 Vol. 221; Iss. 1-4

Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

Kazumasa Hiramatsu, Katsuya Nishiyama, Masaru Onishi, Hiromitsu Mizutani, Mitsuhisa Narukawa, Atsushi Motogaito, Hideto Miyake, Yasushi Iyechika, Takayoshi Maeda
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Volume:
221
Year:
2000
Language:
english
Pages:
11
DOI:
10.1016/s0022-0248(00)00707-7
File:
PDF, 714 KB
english, 2000
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