High-quality GaN films obtained by air-bridged lateral...

Journal of Crystal Growth 2000 Vol. 221; Iss. 1-4

High-quality GaN films obtained by air-bridged lateral epitaxial growth

Akihiko Ishibashi, Isao Kidoguchi, Gaku Sugahara, Yuzaburoh Ban
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Volume:
221
Year:
2000
Language:
english
Pages:
7
DOI:
10.1016/s0022-0248(00)00710-7
File:
PDF, 440 KB
english, 2000
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