InGaN heterostructures grown by molecular beam epitaxy::...

InGaN heterostructures grown by molecular beam epitaxy:: from growth mechanism to optical properties

B Damilano, N Grandjean, S Vézian, J Massies
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Volume:
227-228
Year:
2001
Language:
english
Pages:
5
DOI:
10.1016/s0022-0248(01)00744-8
File:
PDF, 185 KB
english, 2001
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