Dopant-induced interface disorder in InGaAs/AlAsSb...

Dopant-induced interface disorder in InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy

T Mozume, N Georgiev, H Yoshida
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Volume:
227-228
Year:
2001
Language:
english
Pages:
5
DOI:
10.1016/s0022-0248(01)00775-8
File:
PDF, 221 KB
english, 2001
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