High-mobility GaN epilayer grown by RF plasma-assisted...

High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer

W.K Fong, C.F Zhu, B.H Leung, C Surya
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Volume:
233
Year:
2001
Language:
english
Pages:
8
DOI:
10.1016/s0022-0248(01)01592-5
File:
PDF, 158 KB
english, 2001
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