Incorporation of nitrogen into GaAsN grown by MOCVD using...

Journal of Crystal Growth 2002 Vol. 234; Iss. 2-3

Incorporation of nitrogen into GaAsN grown by MOCVD using different precursors

Sarah Kurtz, R. Reedy, Greg D. Barber, J.F. Geisz, D.J. Friedman, W.E. McMahon, J.M. Olson
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Volume:
234
Year:
2002
Language:
english
Pages:
5
DOI:
10.1016/s0022-0248(01)01711-0
File:
PDF, 130 KB
english, 2002
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