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MOCVD growth of device-quality GaN on sapphire using a three-step approach
B.L Liu, M Lachab, A Jia, A Yoshikawaa, K TakahashiVolume:
234
Year:
2002
Language:
english
Pages:
9
DOI:
10.1016/s0022-0248(01)01755-9
File:
PDF, 219 KB
english, 2002