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Step-bunching in SiC epitaxy: anisotropy and influence of growth temperature
M Syväjärvi, R Yakimova, E JanzénVolume:
236
Year:
2002
Language:
english
Pages:
8
DOI:
10.1016/s0022-0248(01)02331-4
File:
PDF, 243 KB
english, 2002