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Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching
G. Feng, X.H. Zheng, Y. Fu, J.J. Zhu, X.M. Shen, B.S. Zhang, D.G. Zhao, Y.T. Wang, H. Yang, J.W. LiangVolume:
240
Year:
2002
Language:
english
Pages:
5
DOI:
10.1016/s0022-0248(02)00922-3
File:
PDF, 120 KB
english, 2002