Growth of Eu-doped GaN by gas source molecular beam epitaxy...

Growth of Eu-doped GaN by gas source molecular beam epitaxy and its optical properties

Zhiqiang Li, Hyungjin Bang, Guanxi Piao, Junji Sawahata, Katsuhiro Akimoto
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Volume:
240
Year:
2002
Language:
english
Pages:
7
DOI:
10.1016/s0022-0248(02)00952-1
File:
PDF, 226 KB
english, 2002
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