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Kinetics of residual doping in 4H-SiC epitaxial layers grown in vacuum
A. Kakanakova-Georgieva, R. Yakimova, G.K. Gueorguiev, M.K. Linnarsson, M. Syväjärvi, E. JanzénVolume:
240
Year:
2002
Language:
english
Pages:
7
DOI:
10.1016/s0022-0248(02)01077-1
File:
PDF, 115 KB
english, 2002