Characteristics of GaN/Si(1 1 1) epitaxy...

Journal of Crystal Growth 2002 Vol. 241; Iss. 3

Characteristics of GaN/Si(1 1 1) epitaxy grown using Al0.1Ga0.9N/AlN composite nucleation layers having different thicknesses of AlN

Seong-Hwan Jang, Seung-Jae Lee, In-Seok Seo, Haeng-Keun Ahn, Oh-Yeon Lee, Jae-Young Leem, Cheul-Ro Lee
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Volume:
241
Year:
2002
Language:
english
Pages:
8
DOI:
10.1016/s0022-0248(02)01308-8
File:
PDF, 407 KB
english, 2002
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