Growth and characterization of low defect GaN by hydride...

Growth and characterization of low defect GaN by hydride vapor phase epitaxy

Xueping Xu, R.P Vaudo, C Loria, A Salant, G.R Brandes, J Chaudhuri
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Volume:
246
Year:
2002
Language:
english
Pages:
7
DOI:
10.1016/s0022-0248(02)01745-1
File:
PDF, 368 KB
english, 2002
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