![](/img/cover-not-exists.png)
Growth and characterization of low defect GaN by hydride vapor phase epitaxy
Xueping Xu, R.P Vaudo, C Loria, A Salant, G.R Brandes, J ChaudhuriVolume:
246
Year:
2002
Language:
english
Pages:
7
DOI:
10.1016/s0022-0248(02)01745-1
File:
PDF, 368 KB
english, 2002